- AFM
- Atomic Force Microscopy
- Ag
- Silver
- AIN
- Aluminum Nitride
- Al
- Aluminum
- Al2O3
- Aluminum Oxide
- ALD
- Atomic Layer Deposition
- a-Si
- Amorphous Silicon
- Au
- Gold
- BCB
- Benzocyclobutene
- C4F8
- Octafluorocyclobutane
- CAIBE
- Chemically-Assisted Ion Beam
- CF4
- Carbon Tetrafluoride
- CHF3
- either “Fluoroform” or “Trifluoromethane”
- Cl2
- Chlorine
- CMOS
- Complementary Metal Oxide Semiconductor
- Cr
- Chrome
- Cu
- Copper
- DBR
- Distributed Bragg Reflector
- DRIE
- Deep Reactive Ion Etching
- GaAs
- Gallium Arsenide
- GaN
- Gallium Nitride
- GaSb
- Gallium Antimonide
- Ge
- Germanium
- HMDS
- Hexamethyldisilazane
- HRD
- High Resolution X-Ray Diffraction
- ICP
- Inductively-Coupled Plasma
- In
- Indium
- InAlGaN
- Indium Aluminum Gallium Nitride
- INP
- Indium Phosphide
- ITO
- Indium Tin Oxide
-
KOH
- Potassium Hydroxide
- LED
- Light-emitting diode
- LPCVD
- Low Pressure Chemical Vapor Deposition
- LTPS
- Low Temperature Polysilicon
- MEMS
- Micro-Electro-Mechanical-Systems
- Mo
- Molybdenum
- MoCr
- Moly-Chrome
- MOCVD
- Metal Organic Chemical Vapor Deposition
- Nb
- Niobium
- NH3
- Ammonia
- Ni
- Nickel
- O2
- Oxygen
- Pd
- Paladium
- PECVD
- Plasma-Enhanced Chemcial Vapor Deposition
- PL
- Photoluminescence
- Poly-Si
- Polysilicon
- Pt
- Platinum
- PVD
- Physical Vapor Deposition
- RF
- Radio Frequency
- RIE
- Reactive Ion Etching
- SEM
- Scanning Electron Microscopy
- SF6
- Sulfur Hexafluoride
- Si
- Silicon
- Si3N4
- Silicon Nitride
- SiC
- Silicon Carbide
- SiF4
- Silicon Tetrafluoride
- SiN
- Silicon Nitride
- SiO2
- Silicon Dioxide
- SiON
- Silicon Oxinitride
- SU8
- SU-8
- Ta2O5
- Tantalum Pentoxide
- Ti
- Titanium
- TiO2
- Titanium Dioxide
- TiW
- Ti-Tungsten
- UV
- Utraviolet
- UWBG
- Ultra-Wide Bandgap
- VCSEL
- Vertical-Cavity Surface-Emitting Lasers
- W
- Tungsten
- Xe
- Xenon
- XeF2
- Xenon Difluoride
- YF3
- Yttrium Fluoride